Magnetron sputtering target is a vacuum coating mechanical parts, but also a power electronic components. From the perspective of the use of the target power supply, we are more concerned about its electrical performance. This article classifies magnetron sputtering target according to different types.
1. According To Mechanical Structure
When classified according to the mechanical structure and target shape, and magnetron sputtering target mainly include planar (rectangular or circular) magnetron targets, coaxial cylindrical magnetic target (divided into rotating magnets or rotating target tubes, and “magnets moving up and down”…) and ring-shaped conical magnetron target (S gun) and so on.
2. According To Planar Target
The planar targets are divided into planar rectangular magnetron target, planar circular magnetron target, and arc-magnetron dual-purpose composite structure planar target.
3. According To Magnetic Field
(1) Magnetron targets can be classified into permanent magnets and electromagnets depending on the forming methods of the magnetic field.
(2) According to the difference in the arrangement and distribution position of the magnetron target in the vacuum chamber and the difference in distribution status of magnetic poles and magnetic lines, magnetron sputtering target can be divided into balanced magnetron sputtering and unbalanced magnetron sputtering (unbalanced magnetron sputtering can help plasma extend away from the target surface to improve the surface film layer quality of the profiled workpiece and large-area ion deposition effect). The multi-target closed magnetic field unbalanced magnetron sputtering system can obtain high deposition rate and higher quality thin film.
(3) Unbalance magnetron field of the magnetron sputtering target can be obtained not only by changing the size and strength of the inner and outer permanent magnets, but also produced by two sets of electromagnetic coils, or using a mixed structure of electromagnetic coils and permanent magnets. Also, adding additional solenoids between the cathode and the substrate to change the magnetic field between the cathode and the substrate can help control the ratio of positive ions and atoms in the deposition for best effects.